Download 2SC1629 Datasheet PDF
Inchange Semiconductor
2SC1629
2SC1629 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) - DARLINGTON APPLICATIONS - Automotive ignition - Switching regulator - Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 6A ICM Collector Current-peak 10 A IB Base Current Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 0.3 50 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.5 ℃/W isc website: .iscsemi. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product...