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2SC1629 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitte

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SC1629 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 6A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 0.3 50 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.5 ℃/W isc website： www.iscsemi.