Low Collector Saturation Voltage-
:VCE(sat)= 1.0(V)(Max)@ IC= 2A
DC Current Gain-
: hFE= 35-320 @ IC= 0.5A
Complement to Type 2SA671
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in low frequency power ampli
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
:VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain-
: hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
2SC1061 Datasheet
