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2SC1815 - Silicon NPN Power Transistor

General Description

High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SA1015(O,Y,GR class) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifi

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isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1815 DESCRIPTION ·High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 50 V 5 V 150 mA 50 mA 400 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.