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2SC1815 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1815.

General Description

·High Voltage and High Current Vceo=50V(Min.),Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 50 V 5 V 150 mA 50 mA 400 mW 125 ℃ -55~125 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC1815 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ;

IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ;

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