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isc Silicon NPN Transistor
INCHANGE Semiconductor
2SC1815
DESCRIPTION ·High Voltage and High Current
Vceo=50V(Min.),Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
60
V
50
V
5
V
150
mA
50
mA
400
mW
125
℃
-55~125
℃
isc website:www.iscsemi.