SeCoS Halbleitertechnologie GmbH 2SC1815W
The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.| Part No. | 2SC1815W |
|---|---|
| Datasheet | 2SC1815W Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
REF. A A1 A2 D E HE Min. 0.80 0 0.80 1.80 1.15 1.80 Millimeter Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. MillimeterABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO Collector-Base Voltage Ta=25oC Parameter Value 60 50 5 150 225 -55~+150 Units V V V mA mW O IC PD TJ,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature o CELECTRICAL CHARACTERISTICS
Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min 60 50 5 120 25 80 - Typ. - Max - Unit V V V nA nA mV V Test Conditions I C= 100 µA I C=...