SeCoS Halbleitertechnologie GmbH 2SC1815K
NPN Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ta = 25к) TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Operating and Storage Junction Temperature Range SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE(sat) fT TJ, TSTG TEST CONDITIONS IC = 100 µA, IE = 0 A IC = 0.1 mA, IB = 0 A IE = 100 µA, IC = 0 A VCB = 60 V, IE = 0 A VCE = 50 V, IB = 0 A VEB = 5 V, IC = 0 A VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA, f = 30 MHz Min. 60 50 5 130 80 Typ. - 55 ~ +150 Max. 0.1 0.1 0.1 400 0.25 1 UNIT V V V µA µA µA V V MHz к ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS: Rank hFE Marking: HF L 130 ~ 200 H 200 ~ 400 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Free Datasheet Page 1 of 3 2SC1815K Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors 01-Jun-2002 Rev.