2SC1815 Datasheet PDF

FEATURES

Ÿ NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=50V. Ÿ Collector current IC=0.15A. Ÿ Transition frequency fT>80MHz @ IC=1mAdc, VCE=10Vdc, f=30MHz. Ÿ In compliance with EU RoHS 2002/95/EC directives.

MECHANICAL DATA

Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking:HF 3 HF 12 C BE

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter Vaule VCBO VCEO VEBO IC PC RθJA TJ TSTG Collector-Base Voltage 60 Collector-Emitter Voltage 50 Emitter-Base Voltage 5 Collector Current 0.15 Total Device Dissipation 0.2 Thermal Resistance Form Junction to Ambient 625 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W OC/W OC OC 2SC1815

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ.Max.Units Collector-Base breakdown voltage V(BR)CBO IC=100uA,IE=0 60 Collector-Emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 Emitter-Base breakdown volt...