Inchange Semiconductor 2SC1815
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1815 |
|---|---|
| Datasheet | 2SC1815 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max)●Excellent hFE Linearity
●Low Noise
●Complement to Type 2SA1015(O,Y,GR class)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio frequency general purpose amplifierAPPLICATIONS
●Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V 50 V 5 V 150 mA 50 mA 400 mW 125 ℃ -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC1815ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current...