Toshiba 2SC1815
Silicon NPN Transistor
| Part No. | 2SC1815 |
|---|---|
| Datasheet | 2SC1815 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Driver Stage AmplifierAPPLICATIONS
2SC1815 Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max)● Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
● Low noise: NF = 1dB (typ.) at f = 1 kHz
● Complementary to 2SA1015 (O, Y, GR class)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation IC 150 mA IB 50 mA JEDEC TO-92 PC 400 mW JEITA SC-43 Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
