Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
I i 2SC2075
27MHz POWER AMPLIFIER APPLICATIONS.
Unit in mm
Features
- Remended for Output Stage Applicat ion of AM 4W Transmitter.
- High Power Gain.
/ 10.3MAX. 03.6±O.2
- 1 h r
Sfiit
- '
<!
3 to
CO in
- Wide Area of Safe Operation.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
RBE=50^ Emitter-Base Voltage
Collector Current
Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCER vEBO ic IE PC
Tj Tstg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Breakdown Collector-Emitter
Voltage...
