Inchange Semiconductor 2SC2075
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2075 |
|---|---|
| Datasheet | 2SC2075 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High transition frequency●Wide area of safe operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●27MHz Power AmplifierAPPLICATIONS
●Recommended for output stage application of AM 4W transmitterABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150Ω 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A IE Emitter current Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2075 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2075ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CER Collector-Emitter Breakdown Voltage IC=10mA; RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A ICBO Collector Cutoff...