2SC2075 Overview
RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 30V.
| Part number | 2SC2075 |
|---|---|
| Datasheet | 2SC2075-INCHANGE.pdf |
| File Size | 188.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 30V.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC2075 | Silicon NPN Transistor | Toshiba |
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2SC2075 | SILICON POWER TRANSISTOR | SavantIC |
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