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2SC2075 - NPN Transistor

General Description

High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T

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isc Silicon NPN Power Transistor DESCRIPTION ·High transition frequency ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·27MHz Power Amplifier Applications ·Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150Ω 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A IE Emitter current Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2075 isc website：www.iscsemi.