2SC2075 Description
RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 30V.
2SC2075 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2075 | Silicon NPN Transistor |
SavantIC |
2SC2075 | SILICON POWER TRANSISTOR |
RBE=500Ω V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 30V.