Toshiba 2SC2075
Silicon NPN Transistor
APPLICATIONS
. Unit in mmFEATURES
● Recommended for Output Stage Applicat ion of AM 4W Transmitter.● High Power Gain. / 10.3MAX. 03.6±O.2 *1 h r XJ Sfiit *' <! 3 to CO in
● Wide Area of Safe Operation.
MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage RBE=50^ Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCER vEBO ic IE PC Tj TstgELECTRICAL CHARACTERISTICS
(Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Breakdown Collector-Emitter Voltage Emitter-Base DC Current Gain Collector- Emitter Saturation Voltage !CB0 V (BR)CER v (BR)EBO h FE(l) h FE(2) v CE(sat) Transition Frequency fT Collector Output Capacitance C ob Output Power (Fig. 1) Po q J i— 1 .5MAX. o | 0.76 \i FATING UNIT X 80 V <;.S4 2.t>4 IT 80 V JC i 2 IT 4.0 V CD 4 -4 10 150 -55VL50 A 1. BASE 2. COLLECTOR (HEAT SINK) A 3. EMITTER W JEDEC TC) — 220 AB °C EIAJ SC — 46 °C TOSHIBA 2 — 10 A 1 A Mounting Kit No.