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2SC2104 - Silicon NPN Transistor

Features

  • . Output Power : P G =3W(Min. ) (f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=15V, Pi= 0.4W, f=470MHz Unit in mm m%.

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Datasheet Details

Part number 2SC2104
Manufacturer Toshiba
File Size 62.69 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2104 Datasheet

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Full PDF Text Transcription

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: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=15V, Pi= 0.
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