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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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THGBMDG5D1LBAIL 4GB THGBMDG5D1LBAIL TOSHIBA e-MMC Module INTRODUCTION THGBMDG5D1LBAIL is 4GB density of e-MMC Module product housed in 153 ball BG

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High trans

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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CMOS Digital Integrated Circuits Silicon Monolithic 74HC14D 74HC14D 1. Functional Description • Hex Schmitt Inverter 2. General The 74HC14D is a hig

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TC4011BP/BF/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP, TC4011BF, TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B i

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TPCA8059-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCA8059-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Inte

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8227P Low Frequency Power Amplifier TA8227P is an audio power IC with built-in two cha

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RN1314 to RN1318 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1314/15/16/17/18 1. Applications •

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TB2929HQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929HQ 45W × 4-ch BTL Audio Power IC The TB2929HQ is a four-channel BTL power

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RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Inte

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