2SC2793
2SC2793 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. Excellent Switching Times
: t r =1.0/is (Max.), tf=1.0 >us (Max.) (Ic=3A) . High Collector Breakdown Voltage : Vcgo= 800V
INDUSTRIAL APPLICATION Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Vc BO
Collector-Emitter Voltage
Vc EO
Emitter-Base Voltage v EBO
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
IC I CM IB
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage l EBO v (BR)CB0 V (BR) CEO
DC Current Gain h FE(l) h FE(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage v CE(sat) v BE(sat)
Rise Time tr
Switching Time Storage Time 'Fall Time tstg tf
-55-150
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEG EIAJ TOSHIBA
2-34A1A
Weight...
