Datasheet Details
| Part number | 2SC2793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2793-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2793.
| Part number | 2SC2793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2793-INCHANGE.pdf |
|
|
|
· ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2793 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2793 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SC2793 | Silicon NPN Transistor | Toshiba |
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