Inchange Semiconductor 2SC2794
The 2SC2794 is suitable for low power switching regulator, DC-DC converter and high voltage switch. The information contained herein is presented only as a guide for the applications of our products.DESCRIPTION
●High breakdown voltage●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCER Collector-Emitter Voltage RBE=150Ω 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 25 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2794ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 100mA ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 150mA ; VCE= 2V hFE-2 DC Current Gain IC= 1A ; VCE= 2V MIN TYP.