2SC2793 Datasheet and Specifications PDF

The 2SC2793 is a Silicon NPN Transistor.

Key Specifications

2SC2793 Datasheet

2SC2793 Datasheet (Toshiba)

Toshiba

2SC2793 Datasheet Preview

SILICON NPN TRIPLE DIFFUSED TYPE HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES . Excellent Switching Times : .

. Excellent Switching Times : t r =1.0/is (Max.), tf=1.0 >us (Max.) (Ic=3A) . High Collector Breakdown Voltage : Vcgo= 800V INDUSTRIAL APPLICATION Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 900 Collector-Emitter Voltage VcEO 800 Emitt.

2SC2793 Datasheet (SavantIC)

SavantIC

2SC2793 Datasheet Preview

·With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2.

tter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=3 A;IB=0.6 A IC=3 A;IB=0.6 A VCB=800V; IE=0 VEB=7V; .

2SC2793 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

2SC2793 Datasheet Preview

· ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS.

ITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current VCB=900V; IE=0 IEBO Emi.

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