2SC2868
2SC2868 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : Vceo= 80V . Low Noise Figure : NF=ld B (Typ . ) , 10d B(Max.) . Excellent h FE Linearity: h FE(0.1m A)/h FE(2m A)=0.90(Typ,
- plementary to 2SA1158.
_&1MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING
VCBO
VCEO
VEBO ic
^stg
-55-125
UNIT
1.27 to
- d
1. EMITTER
2. COLLECTOR a BASE m A m A EIAJ m W TOSHIBA
SC- 4 3 2-5P1B
Weight : 0.21g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO VCB=80V, IE=0
Emitter Cut-off Current l EBO VEB=5V, lc=0
DC Current Gain h FE
VCE=6V, IC=2m A
Collector-Emitter Saturation Voltage
Vc E(sat) 1(3= 10m A, l B=lm A
Base-Emitter Saturation Voltage Transition Frequency
VBE(sat) IC=10m A, Ig=lm A f T
VCe=10V, IE=-2m A
Collector Output Capacitance...
