2SC2876 - Silicon NPN Transistor

Toshiba

Key Features

. High Gain : I 2 i e ) 2 =10. 5dB (Typ. ), f=lGHz . Low Noise Figure : NF=2.3dB (Typ. ), f=lGHz . High f T.
Low VCE ( sat ) : f T= 7.0GHz (Typ. ) : V CE ( sat )=0.13V (Typ. ) Unit in mm.

2SC2876 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2876
Manufacturer	Toshiba
File Size	114.68 KB
Description	Silicon NPN Transistor
Datasheet	2SC2876 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: S SILICON NPN EPITAXIAL PLANAR TYPE 2SC2876 UHF-C BAND LOW NOISE AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES . High Gain : I 2 i e ) 2 =10. 5dB (Typ.), f=lGHz . Low Noise Figure : NF=2.3dB (Typ.), f=lGHz . High f T • Low VCE ( sat ) : f T= 7.0GHz (Typ.) : V CE ( sat )=0.13V (Typ.