• Part: 2SC2876
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 114.68 KB
Download 2SC2876 Datasheet PDF
Toshiba
2SC2876
FEATURES . High Gain : I 2 i e ) 2 =10. 5d B (Typ.), f=l GHz . Low Noise Figure : NF=2.3d B (Typ.), f=l GHz . High f T - Low VCE ( sat ) : f T= 7.0GHz (Typ.) : V CE ( sat )=0.13V (Typ.) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL Vc BO v CEO v EBO IB ic pc Tj T stg ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage I EB0 v (BR) CEO h FE v CE(sat) v BE(sat) Collector Output Capacitance Cob Reverse Transfer Capacitance ^re Input Capacitance Gib Transition Frequency Insertion Gain Noise Figure f T IS 2 lel 2 NF RATING UNIT 40 m A 80 m A 200 m W °c -55~125 °C 4.2 MAX ....