Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type
For Muting and Switching Applications
- High emitter-base voltage: VEBO = 25 V (min)
- High reverse hFE: Reverse hFE = 150 (typ.) (VCE =
- 2 V, IC =
- 4 mA)
- Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
50 20 25 300 60 400 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off...
