Part 2SC2879
Description HG RF POWER TRANSISTOR
Category Transistor
Manufacturer HGSemi
Size 294.27 KB
2SC2879 Datasheet (PDF) Download
HGSemi
2SC2879

Overview

Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use).

  • Specified 12.5V, 28MHz Characteristics
  • PO = 100W PEP
  • GP = 15.2 Typ. at 100 W/28 MHz
  • IMD3 = -24 dBc max. at 100 W(PEP)
  • Omnigold™ Metalization System
2SC2879 datasheet preview

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2SC2879 Datasheet