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2SC2879 - HG RF POWER TRANSISTOR

General Description

Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use)

Key Features

  • Specified 12.5V, 28MHz Characteristics.
  • PO = 100W PEP.
  • GP = 15.2 Typ. at 100 W/28 MHz.
  • IMD3 = -24 dBc max. at 100 W(PEP).
  • Omnigold™ Metalization System.

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Datasheet Details

Part number 2SC2879
Manufacturer HGSemi
File Size 294.27 KB
Description HG RF POWER TRANSISTOR
Datasheet download datasheet 2SC2879 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HG Semiconductors 2SC2879HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use) FEATURES • Specified 12.5V, 28MHz Characteristics • PO = 100W PEP • GP = 15.2 Typ. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α 1 H Lb 3 w2 M C A c p U2 5 D1 U3 w1 M A B 2 Q 1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE. UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.219 0.006 0.004 D D1 F H L p Q q U1 U2 U3 12.86 12.83 2.67 28.45 7.93 12.59 12.57 2.41 25.52 6.32 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.