| Part Number | 2SC2879 |
|---|---|
| Manufacturer | HGSemi |
| Overview |
Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use)
FEATURES
• Specified 12.5V, 28MHz Characteristics • PO = 100W PEP • GP = 15.2 Typ. at 100 W/28 MHz • IMD.
* Specified 12.5V, 28MHz Characteristics * PO = 100W PEP * GP = 15.2 Typ. at 100 W/28 MHz * IMD3 = -24 dBc max. at 100 W(PEP) * Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α 1 H Lb 3 w2 M C A c p U2 5 D1 U3 w1 M A B 2 Q 1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN NOTE: ALL . |
2SC2879 Datasheet
The 2SC2879 is a HG RF POWER TRANSISTOR.
| Part Number | 2SC2879 |
|---|---|
| Description | NPN SILICON RF POWER TRANSISTOR |
| Manufacturer | ASI |
| Overview |
The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° L A FULL R
FEATURES:
• PG = 13 Typ. min. at 10.
* PG = 13 Typ. min. at 100 W/28 MHz * IMD3 = -24 dBc max. at 100 W(PEP) * Omnigold™ Metalization System E C Ø.125 NOM. C B B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 45 V 18 V 4.0 V 250 W @ TC = 25 °C -65 °C to +175 °C -65 °C to +175 °C 0.6 °C/W DIM A B C D E F G . |
| Part Number | 2SC2879 |
|---|---|
| Description | TRANSISTOR |
| Manufacturer | Toshiba |
| Overview | . . |