Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
- High-speed switching time: tstg = 1.0 μs (typ.)
- Small flat package
- PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
- plementary to...
