The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applications
2SC2873
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
2
A
IB
0.4
A
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.
2SC2873 Datasheet
