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2SC2873 - Silicon PNP Transistor

Key Features

  • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ. ). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range.
  • 1 Mounted on ceramic substrate (250 mm2 X 0.8 t) Symbol VCBO VCEO VEBO IC IB PC PC.
  • 1 Tj Tstg Rating 50 50 5 2 0.4 500 1000 1.

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SMD Type Silicon PNP Epitaxial Type 2SC2873 Transistors Features Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ.). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range *1 Mounted on ceramic substrate (250 mm2 X 0.8 t) Symbol VCBO VCEO VEBO IC IB PC PC *1 Tj Tstg Rating 50 50 5 2 0.4 500 1000 150 -55 to +150 Unit V V V A A mW mW www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.