Datasheet Summary
General Purpose Transistor
2SC2873-G Series (NPN)
RoHS Device
Features
- Small flat package
- High speed switching time.
- Low collector-emitter saturation voltage.
Circuit Diagram
1 : BASE 2 : COLLECTOR 3 : EMITTER
1 Base
Collector 2
3 Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base voltage
VCBO
Collector-Emitter voltage
VCEO
Emitter-Base voltage
VEBO
Collector current
IC 2 A
Collector power dissipation
Thermal resistance from junction to ambient
PD RθJA
500 mW 250 °C/W
Junction temperature Storage temperature
TJ 150...
