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General Purpose Transistor
2SC2873-G Series (NPN)
RoHS Device
Features
- Small flat package - High speed switching time. - Low collector-emitter saturation voltage.
Circuit Diagram
1 : BASE 2 : COLLECTOR 3 : EMITTER
1 Base
Collector 2
3 Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base voltage
VCBO
50
V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO
5
V
Collector current
IC 2 A
Collector power dissipation
Thermal resistance from junction to ambient
PD RθJA
500 mW 250 °C/W
Junction temperature Storage temperature
TJ 150 °C
Tstg
-55~+150
°C
SOT-89-3L
0.181(4.60) 0.173(4.40)
0.061(1.55) REF.
0.102(2.60) 0.091(2.30)
123
0.167(4.25) 0.155(3.94)
0.020(0.52) 0.013(0.32)
0.060(1.50) TYP.
0.
2SC2873-G Datasheet
