• Part: 2SC3346
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 121.86 KB
Download 2SC3346 Datasheet PDF
Toshiba
2SC3346
2SC3346 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES . Low Collector Saturation Voltage : v CE(sat)=0.4V (Max.) (at I C =6A) . High Speed Switching Time : t st g=1.0>us (Typ.) . plementary to 2SA1329 Unit in mm 3.0:3 MAX 03.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CB0 VCEO VEBO ic IB PC L stg ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage l EBO v (BR)CE0 RATING 80 80 UNIT 2.5 4 2.5 4 < s 1. BASE 2. COLLECTOR (HEAT SINK) 3 EMITTER -55-150 T0-220AB EIAJ TOSHIBA 2-10A1A Mount] ng Kit No. AC75 Weight : l,9g TEST CONDITION MIN. TYP. MAX. UNIT VCB=80V, I E=0 -...