| Title | |
| Description | SILICON NPN EPITAXIAL PLANAR TYPE 2SC382TM TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES • High Gain : Gpe=35dB(Typ, ) (f=45MHz) • Excellent Forward AGC Characteristic. 5.1 MAX. Unit in mm M 0.55MAX. 0.45 00 00 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation... |
| Features |
• High Gain : Gpe=35dB(Typ, ) (f=45MHz) • Excellent Forward AGC Characteristic. 5.1 MAX. Unit in mm M 0.55MAX. 0.45 00 00 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SY... |
| Datasheet |
 2SC382TM Datasheet - 142.51KB |
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