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SILICON NPN EPITAXIAL PLANAR TYPE
2SC382TM
TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS.
FEATURES • High Gain : Gpe=35dB(Typ, ) (f=45MHz) • Excellent Forward AGC Characteristic.
5.1 MAX.
Unit in mm
M
0.55MAX. 0.45
00 00
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
V CBO V
CEO V
EBO
X C
h
pc T
j
T stg
RATING 40 40
4
50 -50 250 125 -55^125
1.27
1.27
UNIT V V V
mA mA mW
9C QC
(
1 a t d qi
3
yi
J
2 ZJ
3
1. EMITTER 2. COLLECTOR 3. BASE
JEDEC
TO - 92
TOSHIBA
SC - 43 2-5F1B
Weight : 0.-21g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN, TYP. MAX.
2SC382TM Datasheet
