2SD1069
2SD1069 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic ICP T BM
T j
T stg
RATING UNIT
- 40
°C
-55-150 °C
Unit in mm
10. 3 MAX. 03.6 ±.0.2
C2J- [f n
Xp a
CO Hi
H a to lrf'1
1.5 MAX. _|| Q7_e II
2.5 4
2.5 4
"W cv
- |
M a...
