Inchange Semiconductor 2SD1069
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1069 |
|---|---|
| Datasheet | 2SD1069 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current Capability●High Collector Power Dissipation Capability
●Built-in Damper Diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●TV horizontal deflection output applications.●High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 1.75 W 40 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ 2SD1069 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 50mH V(BR)CBO Collector-Base Breakdown Volta...