Datasheet4U Logo Datasheet4U.com

2SD1069 - Silicon NPN Transistor

Key Features

  • . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability.

📥 Download Datasheet

Datasheet Details

Part number 2SD1069
Manufacturer Toshiba
File Size 136.73 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1069 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SD1 069 SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic ICP T BM PC T j T stg RATING UNIT 300 V 150 V 6 V 7 A 15 A 2 A 1.75 ¥ 40 150 °C -55-150 °C Unit in mm 10. 3 MAX. 03.6 ±.0.2 C2J• [f n Xp a CO Hi H a to lrf'1 1.5 MAX. _|| Q7_e II 2.5 4 2.