• Part: 2SD1069
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 136.73 KB
Download 2SD1069 Datasheet PDF
2SD1069 page 2
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Datasheet Summary

2SD1 069 SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. Features : . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic ICP T BM T j T stg RATING UNIT - 40 °C -55-150 °C Unit in mm 10. 3 MAX. 03.6...