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2SD1088 - NPN Transistor

Key Features

  • . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUS 1K1AL.

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Datasheet Details

Part number 2SD1088
Manufacturer Toshiba
File Size 86.64 KB
Description NPN Transistor
Datasheet download datasheet 2SD1088 Datasheet

Full PDF Text Transcription for 2SD1088 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1088. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min.) (Vce=2V, I...

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LICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min.) (Vce=2V, Ic=2A) INDUS 1K1AL AMPLICATIONS Unit in mm 10.3MAX. 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO ic IB PC TJ Tstg 5 6 1 30 150 -55~150 COLLECTOR > V X A 2.5 4 2.5 4 > A C*| lOl i %==_!]?. 3 W J— <# . 0* °C 1. BASE °c 2. COLLECTOR ("HEAT SINK) 3. EMITTER TO-220AB BASE' H£ II <w I EMITTER TOSHIBA 2-10A1A M