• Part: 2SD1088
  • Description: High Voltage Darlington Power Transistors
  • Manufacturer: Galaxy Microelectronics
  • Size: 202.66 KB
Download 2SD1088 Datasheet PDF
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Datasheet Summary

High Voltage Darlington Power Transistors Features - Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min). - Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA. - High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 250 V 5V 6 A 1A 2 W -55 to +150...