SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=2000(Min.) (Vce=2V, Ic=2A)
INDUS 1K1AL AMPLICATIONS Unit in mm
10.3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
vCBO 300 V
Collector-Emitter Voltage VCEO 250 V
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
VEBO ic IB
PC
TJ Tstg
5 6 1
30 150
-55~150
COLLECTOR
>
V
X
A
2.5 4
2.5 4
>
A C*| lOl
i %==_!]?. 3
W J—
<#
.
0*
°C 1. BASE
°c 2. COLLECTOR ("HEAT SINK) 3. EMITTER
TO-220AB
BASE'
H£
II
2SD1088 Datasheet
