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2SD1087
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain
: h FE=1000(Min.) (V CE =3V, I C =15A) . Low Collector Saturation Voltage
•• VcE(sat)=1.5V(Max.) (Ic=15A) . Monolithic Construction with Built-in
Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
3 4.3 MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Disipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB PC T
J
T stg
RATING 100 100
5
15
1
100 150
-55-150
B^^^f 1-
UNIT V
1. BASE 2. COLLECTOR CHEAT SINK) 3. EMITTER
V
V TOSHIBA
2 — 34A1A
A Weight : 10.
2SD1087 Datasheet
