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2SD1360 - Silicon NPN Transistor

Key Features

  • . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor.

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Datasheet Details

Part number 2SD1360
Manufacturer Toshiba
File Size 98.18 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1360 Datasheet

Full PDF Text Transcription for 2SD1360 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1360. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : h FE=600(Min. ) (at VCE=2...

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LICATIONS. FEATURES . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 1G3MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5V Collector Current ic 6 A Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB ?c T i T stg 1 30 150 -55~150 A W °C °C 1. BASE 2.