2SD1360 transistor equivalent, silicon npn transistor.
. High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
1G3MA.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic .
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