Datasheet4U Logo Datasheet4U.com

2SD1360 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable

📥 Download Datasheet

Datasheet preview – 2SD1360

Datasheet Details

Part number 2SD1360
Manufacturer INCHANGE
File Size 187.21 KB
Description NPN Transistor
Datasheet download datasheet 2SD1360 Datasheet
Additional preview pages of the 2SD1360 datasheet.

📁 Similar Datasheet

  • 2SD1360 - Silicon NPN Transistor (Toshiba)
  • 2SD1361 - Silicon NPN Transistor (Toshiba)
  • 2SD1362 - Silicon NPN Transistor (Toshiba)
  • 2SD1363 - Silicon NPN Transistor (Toshiba)
  • 2SD1366 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1366A - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1367 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1368 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1368-HF - NPN Transistors (Kexin)
  • 2SD1302 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.
Published: |