| Part number | 2SD1360 |
|---|---|
| Datasheet | 2SD1360-INCHANGE.pdf |
| File Size | 187.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1360 | Silicon NPN Transistor | Toshiba |
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