Datasheet Details
| Part number | 2SD1365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1365-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1365.
| Part number | 2SD1365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1365-INCHANGE.pdf |
|
|
|
·High Collector-Base Voltage : V(BR)CBO= 800V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control systems.
·Power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 5 A 1.5 W 40 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1365 MIN TYP.
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