2SD1362 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage-.
2SD1362 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD1362 | Silicon NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage-.