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2SD1362 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector Power Dissipation- : PC= 40W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operat

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Datasheet Details

Part number 2SD1362
Manufacturer INCHANGE
File Size 202.49 KB
Description NPN Transistor
Datasheet download datasheet 2SD1362 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.
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