• Part: 2SD1361
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 90.04 KB
Download 2SD1361 Datasheet PDF
Toshiba
2SD1361
FEATURES . High DC Current Gain : h FE=2000(Min. ) (V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 0&2±o.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Vc BO 300 V Collector-Emitter Voltage Emitter-Base Voltage Vc EO 250 V Ve BO 5V Collector Current ic 6 A Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range ?c T i Tstg -55^150 °C °C 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT .COLLECTOR TOSHIBA 2-1 OKI A va I 1 Weight : 2. 'EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Saturation Collector-Emitter...