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2SD1361 - Silicon NPN Transistor

Datasheet Summary

Features

  • . High DC Current Gain : h FE=2000(Min. ) (V CE=2V, I C=2A).

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Datasheet preview – 2SD1361

Datasheet Details

Part number 2SD1361
Manufacturer Toshiba
File Size 90.04 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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: 2SD1361 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : h FE=2000(Min. ) (V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 0&2±o.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 300 V Collector-Emitter Voltage Emitter-Base Voltage VcEO 250 V VeBO 5V Collector Current ic 6 A Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB ?c T i Tstg 1 30 150 -55^150 A W °C °C 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT .COLLECTOR TOSHIBA 2-1 OKI A vaI 1 Weight : 2. 'EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP.
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