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2SD1363 - Silicon NPN Transistor

Datasheet Summary

Features

  • . High Collector Current : Ic=7A . Low Saturation Voltage : VCE ( sat) =0.4V(Max. ) (at I C =4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB993.

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Datasheet Details

Part number 2SD1363
Manufacturer Toshiba
File Size 131.86 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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: SILICON NPN TRIPLE DIFFUSED TYPE — HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VCE ( sat) =0.4V(Max.) (at I C =4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB993 INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2±O.2 r 1' ' i i K. CO d' W d -H o o H+1 r-° to irf l i MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage SYMBOL VcBO RATING 70 UNIT V 1.4 + 0.25 0.7 6 -Q15 2.54±Q25 W 1i 2.54±0.25 Collector-Emitter Voltage VcEO 50 V Emitter-Base Voltage VEBO 5V Collector Current ic 7 A Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C IB PC T.1 1 1.5 40 150 A 1. BASE 2.
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