• Part: 2SD1363
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 131.86 KB
Download 2SD1363 Datasheet PDF
Toshiba
2SD1363
FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VCE ( sat) =0.4V(Max.) (at I C =4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . plementary to 2SB993 INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2±O.2 r 1' ' i i K. CO d' W d -H o o H+1 r-° to irf l i MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage SYMBOL Vc BO RATING 70 UNIT V + 0.25 0.7 6 -Q15 2.54±Q25 1i 2.54±0.25 Collector-Emitter Voltage Vc EO 50 V Emitter-Base Voltage VEBO 5V Collector Current ic 7 A Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C IB PC T.1 1.5 40 A 1. BASE 2. COLLECTOR (HEAT SINK) W 3....