2SD1360
FEATURES
. High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
1G3MAX.
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO 600 V
Collector-Emitter Voltage
VCEO 400 V
Emitter-Base Voltage
VEBO
5V
Collector Current ic 6 A
Base Current Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
?c T i
T stg
-55~150
°C °C
1. BASE 2. COLLECTOR (HEAT SINK) 3l EMITTER
EQUIVALENT CIRCUIT
^COLLECTOR
BASEo-
<;
ELECTRICAL CHARACTERISTICS (Ta=25°C)
}
A emitter
TOSHI BA Weight
2-10K1A
CHARACTERISTIC
SYMBOL...
