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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
1G3MAX.
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO 600 V
Collector-Emitter Voltage
VCEO 400 V
Emitter-Base Voltage
VEBO
5V
Collector Current
ic 6 A
Base Current Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
IB
?c T
i
T stg
1
30
150
-55~150
A W
°C °C
1. BASE 2.
2SD1360 Datasheet
