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2SD1362 - Silicon NPN Transistor

Key Features

  • . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992 (at Ic=4A).

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Datasheet Details

Part number 2SD1362
Manufacturer Toshiba
File Size 125.51 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1362 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992 (at Ic=4A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO VcEO VeBO ic RATING 100 80 UNIT V 10.3MAX, 7.0 03.2±O.2 1/ r~ y & i. to c5 X < s to a w -H o o IS iri ji T1 | . 1.2 a 1.4 + 0.25 0.76-0.15 2.54 ±02^ 1 ,_ 2.54 ±0.25 iOO +1 ,i !! c3 €Hi=!: Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB PC 1.5 40 1. BASE 2. COLLECTOR (HEAT SINK) 3.