2SD1362
2SD1362 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Collector Current : Ic=7A . Low Saturation Voltage : Vc E(sat)=0. 5V(Max. ) . High Collector Power Dissipation
: Pc=40W (at Tc=25°C) . plementary to 2SB992
(at Ic=4A)
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
SYMBOL Vc BO Vc EO Ve BO ic
RATING 100 80
UNIT V
10.3MAX,
7.0 03.2±O.2
1/ r~ y
& i. to c5
X < s to a w
-H o o IS iri ji
T1
|
. 1.2 a
+ 0.25
0.76-0.15
2.54 ±02^
,_ 2.54 ±0.25 i OO
+1
,i !! c3 €Hi=!:
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
IB PC
1.5 40
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
Junction Temperature
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitte...
