2SD1361 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain.
- Part: 2SD1361
- Manufacturer: Inchange Semiconductor (official site)
- Size: 184.89 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD1361 | Silicon NPN Transistor |