| Part number | 2SD1361 |
|---|---|
| Datasheet | 2SD1361-INCHANGE.pdf |
| File Size | 184.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1361 | Silicon NPN Transistor | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1360 | NPN Transistor |
| 2SD1362 | NPN Transistor |
| 2SD1365 | NPN Transistor |
| 2SD130 | NPN Transistor |
| 2SD1300 | NPN Transistor |
| 2SD1301 | NPN Transistor |
| 2SD1307 | NPN Transistor |
| 2SD1308 | NPN Transistor |
| 2SD1309 | Silicon NPN Darlington Power Transistor |
| 2SD1311 | NPN Transistor |
