Full PDF Text Transcription for 2SD525 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SD525. For precise diagrams, and layout, please refer to the original PDF.
SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max. • ...
View more extracted text
CEO=100V • Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max. • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO VEBO ic IE IB pC Tj T stg RATING 100 100 5 5 -5 4 UNIT V V V A A A 40 W 150 -55VL50 °C °C 1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER JEDEC TO — 220AB TOSHIBA 2 — 10 A 1
2SD525 Datasheet
