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2SD634 - NPN Transistor

Key Features

  • High DC Current Gain : h FE=2000 (Min. ) (VcE=3V, Ic=3A).
  • Low Saturation Voltage : v CE(sat) =1 - 5v (Max. ), (I C =3A).
  • Complementary to 2SB673, 2SB674, and 2SB675,.

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Datasheet Details

Part number 2SD634
Manufacturer Toshiba
File Size 134.33 KB
Description NPN Transistor
Datasheet download datasheet 2SD634 Datasheet

Full PDF Text Transcription for 2SD634 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD634. For precise diagrams, and layout, please refer to the original PDF.

: 2SD633 2SD634 I2SD635I SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • H...

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PLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (VcE=3V, Ic=3A) • Low Saturation Voltage : v CE(sat) =1 - 5v (Max.), (I C =3A) • Complementary to 2SB673, 2SB674, and 2SB675, INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING Collector-Base 2SD633 100 Voltage 2SD634 2SD635 'CBO 80 60 Collector- Emitter 2SD633 100 Voltage 2SD634 Emitter-Base Voltage 2SD635 Continuous Collector Current Contunuous Base Current Collector Power Dissipation (Tc=25°c: Junction Temperature CEO VEBO ic IB PC 80 60 0.2 40 150 Storage Temperature Range Tstg -55VL