* High Voltage : VCEO=400V
* Low Saturation Voltage : VCE(sat )=1.5V (Max.) (I C =5A, I B =1A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power DissipFation (Tc=25°C) Junctio
2SD640
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Silicon npn transistor.
: 2SD640 I SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICAT.
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