2SD683
2SD683 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . High DC Current Gain : h FE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : Vc EO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm gfe5.0MAX. . JZfc LOMAX.
I3fe _ +009 #1.0- 0.03
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
Collector-Emitter Voltage Emitter-Base Voltage
2SD683 2SD683A
Collector Current Base Current
Collector Power Dissipation (Tc=25°C) v CEO v EBO ic IB
Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
Ti
T stg
BASEo
< =2k X2
RATING 600 400 450
UNIT V
°C
-65^150 °C o COLLECTOR
==200i2
JEDEC
1. BASE 2. EMITTER
COLLECTOR (CASE)
- 3
EIAJ TOSHIBA
- 3, TB
21 A 1 A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
2SD683...
