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2SD684A - NPN Transistor

Key Features

  • High DC Current Gain : h FE=600 (Min. ) (V CE=2V, Ic=2A).
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistor.

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Datasheet Details

Part number 2SD684A
Manufacturer Toshiba
File Size 96.96 KB
Description NPN Transistor
Datasheet download datasheet 2SD684A Datasheet

Full PDF Text Transcription for 2SD684A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD684A. For precise diagrams, and layout, please refer to the original PDF.

: 2SD684A , SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h ...

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H VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=600 (Min.) (V CE=2V, Ic=2A) • Monolithic Construction With Built-in Base-Emitter Shunt Resistor. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO VCEO . Vebo ic IB PC Ti Tstg RATING 600 400 5 6 1 30 150 -65vL50 UNIT V V V A A W °C °c 1, BASE 2. EMITTER COLLECTOR(CASE) JEDEC EIAJ TOSHIBA TO 66 TC — 16A, TB — 23 Mounting kit No.AC74 Weight : 5 .