2SD687 transistor equivalent, silicon npn transistor.
: . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS.
FEATURES : . High DC Current Gain : hFE=20.
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