2SD687
2SD687 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . High DC Current Gain : h FE=2000(Min.)(VCE=2V, Ic=l A) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO V CEO v EBO
- C PC TJ Tstg
RATING 60 40
5 3 25
150 -55^150
EQUIVALENT CIRCUIT
-COLLECTOR
UNIT V V V A W
°C °C
INDUSTRIAL APPLICATIONS Unit in mm l O.SMAX. 0Z.6±O2
^
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
- 220 AB
=4.8 k O -30 OH
I i rrr^rz
TOSHIBA
Mounting Kit No. AC75 Weight : 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP.
Collector Cut-off Current
I CB0
VCB=60V, I E=0
- -
Emitter Cut-off Current
I EB0
VEB=5V, I C=0
- -
Collector-Emitter Breakdown Voltage
DC Current Gain y (BR) CEO h FE(l) h FE(2)
IC=25m A, Ib=0 V CE=2V > I C= 1A VCE=2V, I C=3A
40 2000...
