. High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA)
. Complementary to 2SB679.
x. T 1.5MAX.
Full PDF Text Transcription for 2SD689 (Reference)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEED SWITCHING APPLICATION...
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INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS. 10.3MAX, (2fe-6±0.2 ><T FEATURES . High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA) . Complementary to 2SB679. x.T 1.5MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation „ . TTc=25 C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL VcBO VcEO vEBO ic PC Tj Tstg BASEo- <t RATING
2SD689 Datasheet
